reverse v oltage: 50 - 600 volts forward current: 1.0 amp cefl101 thru CEFL105 maximum ratings and electrical characterics mds0210022b page 1 smd ef ficient fast recovery rectifier smd ef ficient fast recovery rectifier parameter max. repetitive peak reverse voltage max. dc blocking voltage max. rms v oltage peak surge forward current 8.3ms single half sine-wave superimposed on rate load ( jedec method ) max. average forward current max. instantaneous forward current at 2.0 a reverse recovery time max. dc reverse current at rated dc blocking voltage ta=25 ta=100 typical. thermal resistance (note 1) operating junction t emperature storage t emperature symbol v rrm v dc v rms i fsm i o v f trr i r r jl t j t stg unit v v v a a v ns ua note 1: thermal resistance from junction to lead p .c.b. mounted on 8.0x8.0 mm copper pad areas. cefl cefl cefl cefl cefl 101 102 103 104 105 50 50 35 600 600 420 100 100 70 1.0 -55 to +150 50 5.0 250 -55 to +150 400 400 280 200 200 140 c/w c c c c features ideal for surface mount applications easy pick and place plastic package has underwriters lab. flammability classification 94v-0 super fast recovery time for high efficient built-in strain relief low forward voltage drop mechanical data case: mini-sma/sod-123 molded plastic t erminals: solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any approx. weight:0.1 16 gram 30 0.875 1.1 1.25 25 35 50 dim en sio ns i n in che s an d (m illim ete rs) 0.205(5.2) 0.195(4.8) 0.022(0.55) max. 0.105(2.67) 0.095(2.40) do-213ab (plastic melf) www.comchiptech.com c o m c h ip c o m c h ip
rating and characteristic curves (cefl101 thru CEFL105) f o r w a r d c u r r e n t ( a ) forw ard vol tage ( v) fig.2 - fo rward c harac terist ics mds0210022b page 2 0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 1 .8 2 .0 p e a k s u r g e f o r w a r d c u r r e n t ( a ) fig. 4 - non re petiti ve forw ard su rge cur rent number of cycles at 60hz smd ef ficient fast recovery rectifier smd ef ficient fast recovery rectifier fig. 6 - curren t de rating curve fig. 5 - test circuit di agram a nd reve rse rec overy tim e chara cteris tics (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive w notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. 10 noninductive 50 noninductive w w 0 10 20 50 40 30 1 5 10 50 1 00 1 0 1. 0 0 .1 0. 01 0.0 01 single phase half wave 60hz 0 15 30 45 60 75 90 105 120 135 150 100 10 1.0 0.1 0. 01 percent of rated peak reverse v oltage (%) r e v e r s e c u r r e n t ( u a ) fig. 1 - reve rse cha racter istics tj=25 c tj=125 c tj=25 c pulse width 300us 4% duty cycle tj=25 c a v e r a g e f o r w a r d c u r r e n t ( a ) ambient t emperature ( c) 0 25 50 75 100 125 150 175 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 8.3ms single half sine wave jedec methode tj=75 c 0.01 0.1 1.0 10 100 fig. 3 - junc tion cap acitan ce reverse voltage (v) j u n c t i o n c a p a c i t a n c e ( p f ) cefl101-103 CEFL105 cefl104 3 5 3 0 2 5 2 0 1 5 1 0 5 0 f=1mhz and applied 4vdc reverse voltage tj=25 c cefl101-103 cefl104-105 www.comchiptech.com c o m c h ip c o m c h ip
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